Gate-All-Around FET Technology Market By Application (Energy & Power, Consumer Electronics, Inverter & UPS, Industrial System, Others (Medical Devices & Traction)), By Geography, Size, Share, Forecast 2021-2030

Industry Report and Statistics (Facts & Figures) - Sales & Demand by Application & Product
 

The global Gate All Around FET technology (GAAFET) market was $30.06 million in 2021 and is predicted to reach $472.25 million by 2030, representing a CAGR of 35.8% throughout the period of 2021-2030. 

A unified set of electronic circuits on a single tiny chip of semiconductor material is known as an integrated circuit. Integrating a large number of tiny MetalOxide Semiconductor transistors into a compact chip resulted in smaller, quicker, and less expensive circuits than discrete electronic components-based circuits. These transistors are multigate devices, and multi-gate field-effect transistor (MuGFET), metal-oxide-semiconductor-field-effect transistor (MOSFET), multiple-independent-gate field-effect transistor (MIGFET), 3D transistor, MOS semiconductor, Planar double-gate MOSFET (DGMOS), FlexFET, Tri-gate transistor which are some of the existing transistors in the market. But with the rising demands for technologically advanced products, the performance of these transistors is not improving, and hence the industrial sector has been trying to keep chip performance at a high level. Systems from Intel and AMD, for example, only deliver a 10-15% performance gain over prior generation devices. However, it is not easy for the companies that manufacture these chips because there are difficulties in shrinking the size of the chips. Though Moore's law is often associated with the loss of performance, increased slowdowns, and semiconductor process node size, other factors influence performance, increased slowdowns, and semiconductor process node size. The electronics industry is concerned about a slowdown in semiconductor device innovation due to the combined effect of physics and business aims. Moreover, the world's reliance on TSMC and rising geopolitical tension with China have made the world vulnerable to chipsets and their performances. Therefore, TSMC had previously stated that it intends to invest between $25 billion and $28 billion in 2021 to develop and manufacture advanced chips. They also pledged a $100 billion investment within the next three years to boost capacity at their plants after Intel Corp announced a $20 billion commitment to boost its advanced chip manufacturing capacity. 

 

Samsung, a semiconductor design leader, has unveiled a significant transistor design known as Gate-All-Around, or GAA, that intends to follow Moore's law and maybe continue the development of transistor-level semiconductor technology. GAA is essentially a reworking of the classic transistor design, in which gate material wraps the silicon-based channel on four sides instead of three. GAAFET (Gate All Around Field Effect Transistor) technology is considered the FinFET's successor since it offers greater device performance at reduced sizes, such as below 7 nm. The manufacturing process of GAA transistors uses nanowire and nanosheet architectures. Depending on the implementation, the GAAFET structures might be aligned parallel or perpendicular to the substrate. The two main advantages of this transistor design are reduced design size and higher channel length scaling potential, which contribute to increased transistor density. Gate All Around FET technology market trends suggest that thrive of high efficiency, minimized energy loss, improved durability, and growth in nanotechnology are driving the market.

 

 

Market Dynamics:

Market Drivers: - (Improved performance and minimum energy losses)

• The design of GAAFETs differs significantly from that of FINFETs. The channel section is enclosed on all sides by gate material. The design structure allows a considerably more efficient transistor design, resulting in a huge performance per watt improvement over a 5 nm FINFET process. This means that GAAFETs outperform FINFETs in terms of performance, ensuring greater efficiency and durability. Semiconductor Engineering reported that performance is projected to increase by 25% with GAA FETs, while power consumption is predicted to drop by 50%. Both figures have been in the range of 15% to 20% with finFETs. This reason can be considered a primary driver for the growth of the GAAFET technology market.

 

• Moreover, minimized energy losses in GAAFETs are also a major market driver. Samsung reported that its first 3-nm GAA process node with MBCFET (stacked nanosheet transistor) would allow for a 35% reduction in size, a 30% increase in performance, and a 50% reduction in power consumption over the 5-nm process. Furthermore, the logic yield of the 3 nm technology is approaching that of the 4-nm technique, which is now in mass production.

 

Market Restraints: - (Performance issues and high fabrication costs)

• High nanosheet transistor (nanosheet FET) fabrication costs and performance issues like the current breakdown and leakage hamper the growth rate of the GAAFET Technology market.

 

Opportunities: - (Rising demand for consumer electronics, government support in the construction of HVDC & smart grids, growing need for nanotechnology) 

• The government's aim to construct HVDC and smart grids, as well as a growth in demand for consumer electronics, are likely to present the industry with significant prospects in the next years. US Department of Energy (DOE) announced the sanction of $8.25 billion in loans from its Western Area Power Administration (WAPA) and Loan Programs Office (LPO) for efforts to expand and improve the nation's transmission grid, under the aegis of the Biden Administration's commitment for the modernization of the nation's infrastructure and power grid & supply 100% clean energy to all the businesses and homeowners of the country by 2035.

 

• The growing need for Nanotechnology has aided the expansion of the GAA FET market. GAAFETs come in various shapes and sizes, including Nanosheet, Nanowire, hexagonal, Nano ring, and Nano slab. This nanotechnology-based design aids in creating a small design and claims to be able to pack 30 billion transistors on a 50 mm2 device using GAA FET technology.

 

 

GAAFET Technology Market Analysis Of Different Segmentations

The Global GAAFET Technology Market segmentation analysis is based on Application and Regional Area.

Based on Application

• Energy and Power

• Consumer Electronics

• Inverter and UPS

• Industrial System

• Others(Medical Devices and Traction)

 

Based on Regional Area

North America

• The US

• Mexico

• Canada

 

Europe

• UK

• Germany

• France

• Rest of Europe

 

Asia-Pacific

• India

• Japan

• China

• Rest of Asia-Pacific

 

LAMEA

• Africa

• Middle East

• Latin America

 

 

Based on the application, GAAFET Technology has a wider range of applications than FINFETs, making it more popular. The gate-all-around FETs are found in various devices of consumer electronics including cell phones, televisions, laptops, and more. They are employed in industries such as semiconductor and chip design. Designing ICs with GAAFET technology is common in the semiconductor industry. They can be used in the form of switching devices for adequate power management & LV switches (lower than 200 Volts) for power-saving equipment like inverters. Various GAA FET applications are employed in smart gadgets to improve the processor's performance. According to a study, TV sets (+12%) and Computers (+34%) have risen much faster than cell phones (+1%) in the last three years internationally in the year 2021, owing to COVID-19 regulations and increased time spent on learning and working from home. Smartphones, computers, and television sets are predicted to grow at 3–4% per year in 2022. In due course of time, the increased demand in the consumer electronics industry will likely give new chances for the GAA FET market.

 

Based on the Regional Area, North America is the leading the Global Gate All Around FET Technology market. The GAAFET Technology market is predicted to develop significantly due to rising demand, advanced technology and machinery, higher revenue and programs to raise awareness of the requirement. The National Nanotechnology Initiative received more than $1.7 billion in funding from the US President's budget proposal for 2021, and nanotechnology, being one of the primary requirements for GAAFETs, creates a huge potential for growth and development of the worldwide GAAFET technology market. Because of its rapidly rising population levels, Asia-Pacific is predicted to witness higher demand in the projected year. This feature alone elucidates why the Regional Area is predicted to dominate the Gate All Around FET Technology industry throughout the forecasted period. The Regional Area has been urbanized to a larger extent due to higher gains in GDP per capita and infrastructure development, transformation of rural areas into urban areas. According to a study, China, India, South Korea, and Australia led the Asia Pacific area in terms of GDP in 2020, with around 14.7 trillion US dollars. That year, the GDP of emerging and developing Asia was estimated to be over 20.8 trillion international dollars. Singapore had the greatest GDP per capita, around 59.8 US dollars, followed by Australia, which had a per capita GDP of 51.8 US dollars. Macao had the greatest expected GDP growth of 33.5% in 2021, followed by the Maldives, which had an estimated GDP growth of 31.6%.  Moreover, The GAAFET Technology industry top major players are based in the area. As big projects are underway in Asia Pacific countries such as China, India, Japan, South Korea, Australia, and Indonesia, the area can outperform competitors. This is also due to the Regional Area's large reserve base. Because China's exploration operations are rising, tiny catalysts and compounds may be in high demand. According to the National Bureau of Statistics, Regional demand for Gate All Around FET technology will increase during the projection period.

 

Report Attribute	Details
Forecast Period	2021 – 2030
Market size value in 2021	USD 30.06 million
Revenue forecast in 2030	USD 472.25 million
Growth rate	CAGR of 35.8 %
The base year for estimation	2021
Historical data	2015 – 2019
Unit	USD Billion, CAGR (2020 - 2030)
Segmentation	By Application, By Regional Area
By Application	Consumer Electronics, Energy and Power, Industrial System, Inverter and UPS , and Others (Medical Devices and Traction)
By Regional Area	Latin America, North America, Europe and The Asia Pacific.
Country Scope	US, Canada, Germany, UK, Mexico, France, China, Japan, India etc.
Company Usability Profiles	Samsung, Infineon Technologies, Renesas Corporation, Digi-Key, IXYS Corporation, Fairchild Semiconductor, Toshiba Corporation, NXP Semiconductors, STMicro, Power Integration.

 

Global GAAFET Technology Market A 360-Degree Competitive Landscape Analysis

The competitive landscape analysis gives an overall view of some of the hot players operating in the market. Product innovation and continued R&D operations along with key go to market strategies to create sophisticated technologies have assisted the market's growth. In the target industry, there are many pertinent companies, and some of the leaders of GAAFET Technology Market are:

• Samsung

• Infineon Technologies

• Renesas Corporation

• Fairchild Semiconductor.

• Digi-Key

• IXYS Corporation

• Toshiba Corporation

• ABB Group

• NXP Semiconductors

• STMicro

• Power Integration

 

 

Recent Developments:

• In June, 2022 TSMC outlined its plan for N2 2nm silicon production. Along with its plan to shift from FinFET to gate all around design using nanosheets, it also made an announcement to introduce backside power delivery. The primary benefit of backside power delivery is performance enhancement along with less consumption of power. The company divulged its above plan to its European leg of technology symposium.

 

• In June, 2022 Samsung made an announcement that the company has initiated its production of 3nm chip production line. It’s 3nm process is the first of its kind in commercial production process node that uses gate all around transistor technology embarking a significant achievement in the field of silicon lithography.

 

• On April 2022, the chipset provider TSMC, responsible for Apple's Silicon and MediaTek's Dimensity series chipsets in 2022, announced that mass manufacturing of its upcoming 3nm processors would commence in the second half of 2022 (H2 2022).

 

• On March 2021, Samsung exhibited the world's first MBCFET-based SRAM chip. The chip is a 256-gigabyte device with a 56-mm2 surface area. Samsung is proud that the chip consumes 230 mV less power for writing than the traditional approach, thanks to the MBCFET transistors, which enable the business to apply a variety of power-saving approaches. In 2022, the new 3 nm MBCFET process will enter high-volume production.

 

• On November 2020, TSMC made a significant internal breakthrough in developing a 2 nm fabrication technique. This achievement has boosted TSMC's confidence in a 2025 rollout of 2 nm risk production, which is all the more impressive given reports that the company will abandon FinFet in favour of a new multi-bridge channel FET (MBCFET) architecture based on Gate All Around or GAA technology. This achievement comes a year after TSMC formed an internal team to pave the path for 2 nm implementation.